mega power chopper igbtmod? 1400 amperes/1200 volts CM1400E3U-24NF 1 09/08 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 outline drawing and circuit diagram description: powerex chopper igbtmod? modules are designed for use in switching applications. each module consists of one igbt transistor having a reverse- connected super-fast recovery free-wheel diode and an anode- collector connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: high power dc power supply large dc motor drives utility interface inverters ordering information: example: select the complete module number you desire from the table - i.e. CM1400E3U-24NF is a 1200v (v ces ), 1400 ampere chopper igbtmod power module. current rating v ces type amperes volts (x 50) cm 1400 24 a d p (8 places) l t c measured points (the side of cu baseplate) l m h h h h h h k g u h h e f f e2 c2 c2e1 c1 g2 e1 e2 g1 c1 v s t b c j j g g r (9 places) c2e1 e2 g2 e2 c2 label u w x y z aa c1 dimensions inches millimeters l 1.36 +0.04/-0.02 34.6 +1.0/-0.5 m 0.0750.08 1.90.2 p 0.26 6.5 r m6 metric m6 u 0.62 15.7 v 0.71 18.0 w 0.75 19.0 x 0.43 11.0 y 0.83 21.0 z 0.41 10.5 aa 0.22 5.5 dimensions inches millimeters a 5.91 150.0 b 5.10 129.5 c 1.670.01 42.50.25 d 5.410.01 137.50.25 e 6.54 166.0 f 2.910.01 74.00.25 g 1.65 42.0 h 0.55 14.0 j 1.500.01 38.00.25 k 0.16 4.0 housing type (j.s.t. mfg. co. ltd) s = vhr-2n t = vhr-5n
CM1400E3U-24NF mega power chopper igbtmod? 1400 amperes/1200 volts 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 09/08 absolute maximum ratings, t j = 25c unless otherwise specifed ratings symbol CM1400E3U-24NF units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current dc (t c = 94c) i c 1400 amperes peak collector current (pulse, t j 150c) i cm 2800* amperes emitter current (t c = 25c)** i e 100 amperes peak emitter current (pulse)** i em 200* amperes maximum collector dissipation (t j < 150c, t c = 25c) p c 3900 watts mounting torque, m6 mounting screws C 40 in-lb mounting torque, m6 main terminal screw C 40 in-lb weight (typical) C 1400 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts clamp diode part, t j = 25c unless otherwise specifed repetitive peak reverae voltage v rrm 1200 volts forward current (t c = 25c) i f 1400* amperes peak forward current (pulse) i fm 2800* amperes
CM1400E3U-24NF mega power chopper igbtmod? 1400 amperes/1200 volts 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 09/08 electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate-emitter threshold voltage v ge(th) i c = 140ma, v ce = 10v 6 7 8 volts gate leakage current i ges v ge = v ges , v ce = 0v C C 1.5 a collector-emitter saturation voltage v ce(sat) i c = 1400a, v ge = 15v, t j = 25c C 1.8 2.5 volts (without lead resistance) (chip) i c = 1400a, v ge = 15v, t j = 125c C 2.0 C volts module lead resistance r (lead) i c = 1400a, terminal-chip C 0.286 C m input capacitance c ies C C 220 nf output capacitance c oes v ce = 10v, v ge = 0v C C 25 nf reverse transfer capacitance c res C C 4.7 nf total gate charge q g v cc = 600v, i c = 1400a, v ge = 15v C 7200 C nc inductive turn-on delay time t d(on) v cc = 600v, i c = 1400a, C C 800 ns load rise time t r v ge1 = v ge2 = 15v, C C 300 ns switch turn-off delay time t d(off) r g = 0.22 , inductive load C C 1000 ns times fall time t f switching operation C C 300 ns reverse recovery time* t rr i e = 100a C C 700 ns reverse recovery charge* q rr C 90 C c emitter-collector voltage** v ec i e = 100a, v ge = 0v C C 3.0 volts external gate resistance r g 0.22 C 2.2 clamp diode characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units emitter-collector voltage v fm i f =1400a, clamp diode part C C 3.2 volts (without lead resistance) (chip) reverse recovery time t rr i f =1400a, clamp diode part C C 700 ns reverse recovery charge q rr C 90 C c * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. ** represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt 1/2 module, t c reference C C 0.032 c/w point per outline drawing thermal resistance, junction to case r th(j-c) d per clamp diode 1/2 module, C C 0.053 c/w t c reference point per outline drawing thermal resistance, junction to case r th(j-c') q per igbt 1/2 module, C C 0.014 c/w t c reference point under chip thermal resistance, junction to case r th(j-c') d per clamp diode 1/2 module, C C 0.023 c/w t c reference point under chip contact thermal resistance r th(c-f) per 1/2 module, thermal grease applied C 0.016 C c/w
CM1400E3U-24NF mega power chopper igbtmod? 1400 amperes/1200 volts 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 09/08 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 0 10 1 0.5 1.5 1.0 3.0 3.5 2.0 2.5 4.0 10 2 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 3 10 4 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 0 4 8 12 16 20 8 6 4 2 0 t j = 25c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 5 3 4 0 500 1000 2 1 0 3000 1500 2500 2000 v ge = 15v t j = 25c t j = 125c t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 560a i c = 2800a i c = 1400a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 1 2 3 4 5 6 7 8 9 10 v ge = 20v 10 11 12 15 13 9 8 t j = 25 c collector current, i c , (amperes) 0 2000 500 0 1500 1000 2500 3000 2000 500 1500 1000 2500 3000 gate-emitter voltage, v ge , (volts) transfer characteristics (typical) 0 8 12 16 20 v ce = 10v t j = 25c t j = 125c 4 10 -1 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) 20 0 16 12 8 4 0 collector current, i c , (amperes) 10 4 10 2 10 3 10 3 10 2 10 1 switching time, (ns) 2000 4000 10000 8000 6000 v cc = 600v t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0.22? t j = 125c inductive load t f emitter current, i e , (amperes) reverse recovery time, t rr , (ns) 10 3 10 2 10 3 10 2 10 1 10 3 10 2 10 1 reverse recovery current, i rr , (amperes) t rr i rr v cc = 600v v ge = 15v r g = 0.22? t j = 25c inductive load v cc = 400v i c = 1400a 10 4 10 4 gate charge, v ge half-bridge switching characteristics (typical) reverse recovery characteristics (typical)
CM1400E3U-24NF mega power chopper igbtmod? 1400 amperes/1200 volts 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 09/08 forward current, i f , (amperes) 10 2 10 3 10 4 10 0 10 1 10 2 10 3 v cc = 600v v ge = 15v t j = 125c r g = 0.22? inductive load collector current, i c , (amperes) switching loss, e on , e off , (mj/pulse) 10 2 10 3 10 4 10 0 10 2 10 1 10 3 v cc = 600v v ge = 15v t j = 125c r g = 0.22? e on e off inductive load external gate resistance, r g , (?) v cc = 600v v ge = 15v t j = 125c i c = 1400a inductive load external gate resistance, r g , (?) switching loss, e on , e off , (mj/pulse) 0 1.5 1.0 0.5 2.5 2.0 10 1 10 2 10 3 v cc = 600v v ge = 15v t j = 125c i c = 1400a e on e off inductive load 0 1.5 1.0 0.5 2.5 2.0 10 1 10 2 10 3 reverse recovery energy, e rr , (mj/pulse) reverse recovery energy vs. forward current (typical) switching loss vs. collector current (typical) reverse recovery energy, e rr , (mj/pulse) reverse recovery energy vs. external gate resistance (typical) switching energy vs. external gate resistance (typical) time, (s) 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 z th = r th r / 0 3 . " - * ; & % 7 " - 6 &
transient thermal impedance characteristics (igbt & clamp diode) 10 0 normalized transient thermal impedance, z th(j-c) single pulse t c = 25c per unit base r th(j-c') = 0.014c/w (igbt) r th(j-c') = 0.023c/w (clamp)
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